Overview:
* Single step processes
* Small scale production, prototype, test run of Bi-polar, CMOS and MEMS devices
Substrates:
* Materials: Silicon, glass
* Diameter: mainly 100mm. For some processes, other dimensions are possible.
Processes (mainly on new 100mm wafers):
* Photolithography: Stepper and contact aligners
* Plasma etch: Poly, Metal, Oxide
* DRIE: Si
* Wet etch: Si, Oxide, Nitride, Resist, Al, Au etc.
* PVD: Al, Cu, Au, Cr, Si, Ni, Fe, Mo. etc,
* PECVD: Oxide, Nitride, SiC, etc
* Ion implantation: B/Phos/As/Sb (annealing needed after process)
* Si Epi on silicon: Dopant Boron, Arsenic, Phosphorus (on 4 inch silicon wafers only)
* Furnaces: Thermal oxide (wet, dry), Low stress nitride, Doped Polysilicon (N-Phos), Undoped Polysilicon, TEOS, SiC, Alloy, Annealing, etc.
* Cleaning: masks, wafers (limited to wafers in process).
* Metrology: SEM, CDSEM, Particle count, Wafer thickness, Sheet resistance, Thin film thickness
* Dicing: up to 6 inch, 1 mm thickness, sIlicon, glass, sapphire, ceremic, etc. (CL10000)
Quick delivery:
For single step processes or services, thin film or thin film+dicing, we in general guaranttee less than 2 weeks delivery.